Measurements of potential barrier height of grain boundaries in polycrystalline silicon by Kelvin probe force microscopy
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500830500153859
Reference27 articles.
1. Grain boundaries in semiconductors
2. The Influence of Structure and Impurity Precipitation on the Electrical Properties of the Grain Boundaries in Silicon: Copper Precipitation in the Σ = 25 Boundary
3. Characterization of polycrystalline germanium by EBIC
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