The Influence of Structure and Impurity Precipitation on the Electrical Properties of the Grain Boundaries in Silicon: Copper Precipitation in the Σ = 25 Boundary-Reference-Cited by-同舟云学术

The Influence of Structure and Impurity Precipitation on the Electrical Properties of the Grain Boundaries in Silicon: Copper Precipitation in the Σ = 25 Boundary

Published:1989 Issue: Volume: Page:64-76
ISSN:0930-8989
Container-title:Springer Proceedings in Physics
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Author:

Aucouturier M.,Broniatowski A.,Chari A.,Maurice J. L.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-93413-1_9.pdf

Reference45 articles.

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4. Rev. Phys. Appl., 22. (7) (1987) Special issue on “Polycrystalline silicon”.

5. J. Hornstra, Physica, 25, 409 (1959), and

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