Oxygen Gas Dependence of IGZO Thin Film for TFT Channel Layer
Author:
Affiliation:
1. a Department of Electrical engineering , Kyungwon University , Seongnam , 461-701
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://www.tandfonline.com/doi/pdf/10.1080/15421406.2011.599748
Reference12 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
3. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
4. Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In–Ga–Zn–O system
5. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
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1. Low temperature electronic transport in sputter deposited a-IGZO films;Current Applied Physics;2014-11
2. Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films;Thin Solid Films;2013-10
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