Effects of DC sputtering power and rapid thermal processing temperature on tungsten disulfide (WS2) thin films
Author:
Affiliation:
1. Department of Electronic Engineering, Gachon University, Seongnam, Korea
Funder
National Research Foundation of Korea
Ministry of Education
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://www.tandfonline.com/doi/pdf/10.1080/15421406.2019.1596209
Reference12 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2. High Performance Multilayer MoS2 Transistors with Scandium Contacts
3. Molecular dynamics simulations of single-layer molybdenum disulphide (MoS2): Stillinger-Weber parametrization, mechanical properties, and thermal conductivity
4. High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems
5. Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
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