Photofield‐effect in amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors-Reference-Cited by-同舟云学术

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Photofield‐effect in amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors

Published:2008-12 Issue:4 Volume:9 Page:21-29
ISSN:1598-0316
Container-title:Journal of Information Display
language:en
Short-container-title:Journal of Information Display

Author:

Fung Tze‐Ching,Chuang Chiao‐Shun,Nomura Kenji,Shieh Han‐Ping David,Hosono Hideo,Kanicki Jerzy

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1080/15980316.2008.9652066

Reference28 articles.

1. Advanced Multilayer Amorphous Silicon Thin-Film Transistor Structure: Film Thickness Effect on Its Electrical Performance and Contact Resistance

2. Discharge characteristics of a plasma display using vertical auxiliary electrodes

3. XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's

4. 16.1: 82ʺ Ultra Definition LCD Using New Driving Scheme and Advanced Super PVA Technology

5. Designer's casebook-simple current source is independent of V/sub BE(ON)/

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4. Light Effect on Amorphous Tin Oxide Thin‐Film Transistors;Advanced Photonics Research;2024-01-26

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