Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors
Author:
Affiliation:
1. Division of Materials Science and Engineering, Hanyang University, Seongdong-gu, Republic of Korea
2. Division of Electrical Engineering, Hanyang University, Ansan, Republic of Korea
Funder
Ministry of Trade, Industry and Energy
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,General Materials Science
Link
https://tandfonline.com/doi/pdf/10.1080/15980316.2017.1294116
Reference20 articles.
1. Flexible Full-Color AMOLED on Ultrathin Metal Foil
2. Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors
3. Polyimides Containing Trans-1,4-cyclohexane Unit (II). Low-K and Low-CTE Semi- and Wholly Cycloaliphatic Polyimides
4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
5. Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly(ethylene naphthalate) substrates
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