Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density-Reference-Cited by-同舟云学术

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Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density

Published:2022-06-08 Issue:1 Volume:2 Page:64-70
ISSN:2694-1112
Container-title:Functional Diamond
language:en
Short-container-title:Functional Diamond

Author:

Yu Cui¹,Zhou Chuangjie¹,Guo Jianchao¹,He Zezhao¹,Ma Mengyu¹,Yu Hao¹,Song Xubo¹,Bu Aimin¹,Feng Zhihong¹

Affiliation:

1. National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, China

Funder

National Key R&D Program of China

National Key Science and Technology Special Project

Excellent Youth Foundation of Hebei Scientific Committee

National Natural Science Foundation of China

Publisher

Informa UK Limited

Subject

General Medicine

Link

https://www.tandfonline.com/doi/pdf/10.1080/26941112.2022.2082853

Reference33 articles.

1. Diamond as an electronic material

2. Doping and interface of homoepitaxial diamond for electronic applications

3. Enhancement mode metal‐semiconductor field effect transistors using homoepitaxial diamonds

4. Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al$_{2}$O$_{3}$ Passivation Layer

5. 2 W∕mm output power density at 1 GHz for diamond FETs

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1. Numerical investigation of diamond complementary logic integrated circuits;Diamond and Related Materials;2024-10

2. Recent advances in diamond MOSFETs with normally off characteristics;Functional Diamond;2024-05-24

3. Research on the epitaxial direction control and mechanism of polycrystalline diamond grains;Functional Diamond;2024-05-10

4. Achieving ultrahigh hole mobility in hydrogen-terminated diamond via boron nitride modifications;Diamond and Related Materials;2024-04

5. Preparation of High Conductivity Hydrogenated Silicon-Doped Diamond and MOSFET;IEEE Transactions on Electron Devices;2024-04

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