Room-temperature bonding of GaN and diamond via a SiC layer
Author:
Affiliation:
1. Department of Engineering, Osaka City University, Osaka, Japan
2. Institute for Materials Research (IMR), Tohoku University, Oarai, Ibaraki, Japan
3. Department of Physical Electronics, Osaka Metropolitan University, Osaka, Japan
Funder
JSPS KAKENHI
Publisher
Informa UK Limited
Subject
General Medicine
Link
https://www.tandfonline.com/doi/pdf/10.1080/26941112.2022.2145508
Reference33 articles.
1. 30-W/mm GaN HEMTs by Field Plate Optimization
2. An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader
3. GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging
4. Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers
5. Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond
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