Enhancement of interfacial thermal conductance by introducing carbon vacancy at the Cu/diamond interface-Reference-Cited by-同舟云学术

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Enhancement of interfacial thermal conductance by introducing carbon vacancy at the Cu/diamond interface

Published:2024-04 Issue: Volume:223 Page:119021
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Wu Kongping^ORCID,Zhang Leng^ORCID,Li Fangzhen,Sang Liwen,Liao Meiyong^ORCID,Tang Kun,Ye Jiandong,Gu Shulin

Publisher

Elsevier BV

Reference82 articles.

1. A review on GaN HEMTs: nonlinear mechanisms and improvement methods

2. Brief Historical Perspective in Thermal Management and the Shift Toward Management at the Nanoscale

3. Some aspects of the thermal conductivity of isotopically enriched diamond single crystals

4. A silicon-diamond microchannel heat sink for die-level hotspot thermal management

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reaction mechanisms for Ti coatings on diamond;Carbon;2024-06

2. Interfacial thermal conductance of gallium nitride/graphene/diamond heterostructure based on molecular dynamics simulation;Acta Physica Sinica;2024

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