Dependence of the persistent photoconductivity in doping-modulated a-Si: H multilayers on the exposure temperature
Author:
Affiliation:
1. a The James Franck Institute, The University of Chicago , Chicago, Illinois, 60637, U.S.A.
2. b Department of Physics , Patras University , 26110, patras, Greece
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
https://www.tandfonline.com/doi/pdf/10.1080/09500838708214708
Reference16 articles.
1. Amorphous silicon doping superlattices
2. Döuhler , G. H. 1983. Advances in Solid State Physics, Festkörperprobleme, Edited by: Grosse , P. Vol. 23, p. 207Philadelphia: Heyden.
3. Tunable absorption coefficient in GaAs doping superlattices
4. Characterized of glow-discharge deposited a-Si:H
5. Model for persistent photoconductivity in doping-modulated amorphous silicon superlattices
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1. Persistent photoconductance in a-Si: H/a-SiOx:H multilayers;Philosophical Magazine B;1992-01
2. Persistent photoconductance in doping-modulated and compensateda-Si:H;Physical Review B;1991-09-15
3. Persistent photoconductance in a-Si: H/a-SiNx: H multilayers;Philosophical Magazine B;1991-01
4. Metastable defect states and equilibration temperatures in a-SiNx:H, a-SiOx:H and a-SiCx:H;Journal of Non-Crystalline Solids;1991-01
5. Influence of light-induced metastable changes on the electron drift mobility in doping-modulated amorphous silicon;Journal of Non-Crystalline Solids;1990-03
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