Persistent photoconductance in a-Si: H/a-SiNx: H multilayers-Reference-Cited by-同舟云学术

Persistent photoconductance in a-Si: H/a-SiNx: H multilayers

Published:1991-01 Issue:1 Volume:63 Page:33-46
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Hamed A.¹,Fritzsche H.¹

Affiliation:

1. a Department of Physics and the James Franek Institute , The University of Chicago , Chicago , Illinois , 60637 , U.S.A.

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418639108224429

Reference31 articles.

1. Amorphous Semiconductor Superlattices

2. Persistent photoconductivity ina−Si:H/a−SiNx:Hlayered structures

3. Adsorbate and light-induced effects on the conductivity in GD a-SixC1 - x: H

4. Chen , K. J. and Fritzsche , H. 1987.Proceedings of the International Workshop on Amorphous Semiconductors, Edited by: Fritzsche , H. Han , D. X. and Tsai , C. C. 243Singapore: World Scientific.

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