Persistent photoconductance in a-Si: H/a-SiOx:H multilayers
Author:
Affiliation:
1. a Department of Physics and the James Franek Institute , The University of Chicago , Chicago , Illinois , 60637 , USA
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819208223048
Reference38 articles.
1. Persistent photoconductivity ina−Si:H/a−SiNx:Hlayered structures
2. Amer , N. M. and Jackson , W. B. 1984. Semiconductors and Semimetals, Edited by: Pankove , J. I. Vol. 21, 83Orlando, FL: Academic Press. part B
3. Calculation of the Optical Properties of AmorphousSiOxMaterials
4. THE BAND GAP OF GLOW-DISCHARGE-PRODUCED AMORPHOUS SiOx
5. Photoluminescence in the amorphous system SiOx
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