Transition from diffusive to ballistic capture related to hydrogen incorporation in amorphous silicon
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500838708201596
Reference14 articles.
1. Carrier collection efficiency of Schottky diodes on triode dc sputtered hydrogenated amorphous silicon: Transport properties of holes
2. Disorder and density of defects in hydrogenated amorphous silicon-carbon
3. Determination of the extended-state electron mobility in a-Si
4. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy
5. Resolution of the a-Si:H DLTS energy scale controversy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modulated photocurrent to characterize the density of states of thin film semiconductors in the recombination regime;The European Physical Journal Applied Physics;2004-03-29
2. Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu(In,Ga)Se2 and a-Si:H cases;Thin Solid Films;2003-05
3. Gap-state distribution in a-Si:H by modulated photocurrent: Shallow-state-deep-state conversion and temperature shift of the electron-transport path;Philosophical Magazine B;1988-10
4. Gap State Distribution and Interface States in a-Si:H and a-SiGe:H by Modulated Photocurrent;MRS Proceedings;1988-01
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