Gap-state distribution in a-Si:H by modulated photocurrent: Shallow-state-deep-state conversion and temperature shift of the electron-transport path
Author:
Affiliation:
1. a Institut für physikalische Elektronik , Universität Stuttgart Pfaffenwaldring 47, D-7000 Stuttgart 80, F.R. , Germany
2. b Instytut Technologii Elektronowej, Politechniki Wroclawskiej , Wybrzeze Wyspianskiego 27, 50-370 , Wroclaw , Poland
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818808218383
Reference18 articles.
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2. Chapter 2 Density of States from Junction Measurements in Hydrogenated Amorphous Silicon
3. Defect states in amorphous silicon
4. Activated transport in amorphous semiconductors. II. Interpretation of experimental data
5. Doctoral Thesis;Jonscher A. K.,1983
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