Structure of AlGaAs/GaAs multilayers imaged in superlattice reflections
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500838708205241
Reference3 articles.
Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The quantitative characterization of SiGe layers by analysing rocking profiles in CBED patterns;Journal of Microscopy;1999-04
2. Probing semiconductor interfaces by transmission electron microscopy;Philosophical Transactions of the Royal Society of London. Series A: Physical and Engineering Sciences;1993-09-15
3. Dynamical LACBED analysis of Si/SiGe and Si/SiB multilayer structures;Ultramicroscopy;1993-01
4. Kinematical study of GexSi1 – x/Si strained-layer superlattice by a double crystal X-ray diffraction method;Philosophical Magazine Letters;1993-01
5. Diffraction characterization of totally relaxed, partially relaxed, and unrelaxed semiconductor strained‐layer superlattices;Journal of Applied Physics;1992-12
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