The quantitative characterization of SiGe layers by analysing rocking profiles in CBED patterns
Author:
Publisher
Wiley
Subject
Histology,Pathology and Forensic Medicine
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1046/j.1365-2818.1999.00454.x/fullpdf
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2. Electron diffraction studies of strain in epitaxial bicrystals and multilayers;Cherns;Ultramicroscopy,1988
3. Convergent beam electron diffraction studies of strain in Si/SiGe superlattices;Cherns;Philos. Mag. A,1991
4. Performance of electron image converters with YAG single-crystal screen and CCD sensor;Daberkov;Ultramicroscopy,1991
5. Determination of structure factors, lattice strains and accelerating voltage by energy-filtered convergent beam electron diffraction;Deininger;Ultramicroscopy,1993
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Transmission Electron Microscopy Characterization of Crystals;Springer Handbook of Crystal Growth;2010
2. Other microscopy techniques;Microscopy Techniques for Materials Science;2002
3. The critical thickness of silicon-germanium layers grown by liquid phase epitaxy;Applied Physics A: Materials Science & Processing;1999-12-01
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