Prediction of single event upset critical charge and sensitive volume depth by energy deposition analysis of low energy protons-Reference-Cited by-同舟云学术

Prediction of single event upset critical charge and sensitive volume depth by energy deposition analysis of low energy protons

Published:2020-08-19 Issue:11-12 Volume:175 Page:1093-1108
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Zhao Wen¹²^ORCID,Chen Wei²,He Chaohui¹,Chen Rongmei³,Wang Liang⁴,Wang Zujun²,Cong Peitian²,Guo Xiaoqiang²,Shen Chen⁵

Affiliation:

1. School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an, People’s Republic of China

2. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Northwest Institute of Nuclear Technology), Xi’an, People’s Republic of China

3. IMEC, Leuven, Belgium

4. Beijing Microelectronics Technology Institute, Beijing, People’s Republic of China

5. Cogenda Co Ltd., Suzhou, People’s Republic of China

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2020.1806838

Reference30 articles.

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2. Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

3. Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

4. Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions

5. Hubert, G.; Duzellier, S.; Bezerra, F.; Ecoffet, R. Abstracts of Papers, 179–186. Proc. Eur. Conf. Radiation and Its Effects on Components and Systems, Bruges, Belgium, Sept 14–18, 2009.