170 keV Proton radiation effects on low-frequency noise of bipolar junction transistors-Reference-Cited by-同舟云学术

170 keV Proton radiation effects on low-frequency noise of bipolar junction transistors

Published:2017-04-03 Issue:3-4 Volume:172 Page:313-322
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Yue Long¹,Yang Shaohua¹,Liu Yuan¹,Zhang Zhangan¹,Li Xingji²,He Yujuan¹,Lei Zhifeng¹,Lu Yudong¹,En Yunfei¹

Affiliation:

1. The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou, People’s Republic of China

2. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, People’s Republic of China

Funder

National Natural Science Foundation of China

Pearl River S&T Nova Program Guangzhou

Science and Technology Research Project of Guangdong

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2017.1313843

Reference15 articles.

1. Total ionizing dose effects in bipolar devices and circuits

2. Deep-level impurity analysis for p-n junctions of a bipolar transistor from low-frequency g-r noise measurements

3. DLTS Studies of bias dependence of defects in silicon NPN bipolar junction transistor irradiated by heavy ions

4. Annealing effects and DLTS study on PNP silicon bipolar junction transistors irradiated by 20MeV Br ions

5. Combined Radiation Effects of Protons and Electrons on NPN Transistors

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2. Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated with Si Ions;IEEE Transactions on Nuclear Science;2023

3. Using temperature-switching approach to evaluate the ELDRS of bipolar devices;Radiation Effects and Defects in Solids;2017-12-02