Using temperature-switching approach to evaluate the ELDRS of bipolar devices-Reference-Cited by-同舟云学术

Using temperature-switching approach to evaluate the ELDRS of bipolar devices

Published:2017-12-02 Issue:11-12 Volume:172 Page:824-834
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Li Xiaolong¹²³,Lu Wu¹²,Wang Xin¹²,Guo Qi¹²,Yu Xin¹²,He Chengfa¹²,Sun Jing¹²,Liu Mohan¹²³,Yao Shuai¹²³,Wei Xinyu¹²³

Affiliation:

1. Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Urumqi, People’s Republic of China

2. Xinjiang Key Laboratory of Electronic Information Material and Device, Xinjiang Technical Institute of Physics & Chemistry, Urumqi, People's Republic of China

3. Xinjiang Technical Institute of Physics & Chemistry, University of Chinese Academy of Sciences, Beijing, People's Republic of China

Funder

National Natural Science Foundation of China

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2017.1411354

Reference25 articles.

1. Response of advanced bipolar processes to ionizing radiation

2. Dose rate effect of gamma on JFET transistors

3. Dependence of total dose response of bipolar linear microcircuits on applied dose rate

4. ELDRS in Bipolar Linear Circuits: A Review

5. Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

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