Homoepitaxial and Characterization of GaSb Thin Films by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Homoepitaxial and Characterization of GaSb Thin Films by Molecular Beam Epitaxy

Published:2020-07-01 Issue:1 Volume:209 Page:162-170
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Li Chenglin¹²,Fang Dan¹,Gu Kaihui²³,Lv Dong⁴,Fang Xuan¹⁵,Tang Jilong¹,Wang Dengkui¹,Lin Fengyuan¹,Wang Xiaohua¹

Affiliation:

1. State Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, P.R. China;

2. School of Applied Sciences, Jilin Engineering Normal University, Changchun, P.R. China;

3. Jilin Engineering Laboratory for Quantum Information Technology, Changchun, P.R. China;

4. Office of Admissions and Career Development, Southwest Jiaotong University, Chengdu, P.R. China;

5. School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, P.R. China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2020.1728826

Reference13 articles.

1. Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate

2. Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer

3. Interfacial misfit array formation for GaSb growth on GaAs

4. GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

5. Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy