Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer-Reference-Cited by-同舟云学术

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Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer

Published:2011-01-22 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Quantum Sensing and Nanophotonic Devices VIII
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Author:

Nguyen Binh-Minh,Chen Guanxi,Hoang Minh-Anh,Razeghi Manijeh

Publisher

SPIE

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of “M” and “B” superlattice barrier layers on dark current of long-wavelength infrared detectors;Materials Science in Semiconductor Processing;2024-04

2. Investigation of anodic sulfidizaiton passivation of InAs/GaSb Type-II superlattice infrared detector;Optical and Quantum Electronics;2021-07

3. Homoepitaxial and Characterization of GaSb Thin Films by Molecular Beam Epitaxy;Integrated Ferroelectrics;2020-07-01

4. MBE growth and characterization of type-II InAs/GaSb superlattices LWIR materials and photodetectors with barrier structures;Journal of Crystal Growth;2017-11

5. Advances in mid-infrared detection and imaging: a key issues review;Reports on Progress in Physics;2014-08-01

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