Examination of various characteristics for sputtered tantalum oxide-nitride thin films deposited at various oxygen flowrates-Reference-Cited by-同舟云学术

Examination of various characteristics for sputtered tantalum oxide-nitride thin films deposited at various oxygen flowrates

Published:2017-11-22 Issue:1 Volume:185 Page:41-46
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Gandhi Akash A.¹,Chauhan Kamlesh V.¹,Kapopara Jaydeep M.²,Jariwala Nayan N.¹,Rawal Sushant K.³

Affiliation:

1. CHAMOS Matrusanstha Department of Mechanical Engineering, Chandubhai S. Patel Institute of Technology (CSPIT), Charotar University of Science and Technology (CHARUSAT), Changa, Gujarat, India

2. Department of Mechanical Engineering, Alpha College of Engineering & Technology, Khatraj, Gujarat, India

3. McMaster Manufacturing Research Institute, Department of Mechanical Engineering, McMaster University, Main Street West, Hamilton, Ontario, Canada

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2017.1370286

Reference8 articles.

1. Properties of tantalum oxynitride thin films produced by magnetron sputtering: The influence of processing parameters

2. Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

3. Electrical and mechanical properties of tantalum nitride thin films deposited by reactive sputtering

4. Evaluation of adhesion and tribological behaviour of tantalum oxynitride thin films deposited by reactive magnetron sputtering onto steel substrates

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