Transverse piezoelectric properties of {110}-oriented PLZT thin films-Reference-Cited by-同舟云学术

Transverse piezoelectric properties of {110}-oriented PLZT thin films

Published:2018-09-02 Issue:1 Volume:192 Page:113-120
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Laxmi Priya S.¹,Kumar V.¹,Teramoto Takuya²,Kanno Isaku²

Affiliation:

1. Centre for Materials for Electronics Technology (C-MET), (Scientific society, Department of Information Technology, Ministry of Communication and Information Technology, Govt. of India), Thrissur, Kerala, India;

2. Mechanical Engineering, Kobe University, Kobe, Japan

Funder

Japan Science and Technology Agency

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2018.1521659

Reference31 articles.

1. Effect of dopants on ferroelectric and piezoelectric properties of lead zirconate titanate thin films on Si substrates

2. Thin Film Piezoelectrics for MEMS

3. Enhancement of the 90° domain-wall mobility in sol-gel (Pb,La)TiO3 thin films prepared by multiple deposition and crystallization

4. Sol-gel deposition and piezoelectric properties of {110}-oriented Pb(Zr0.52Ti0.48)O3 thin films

5. Influence of low lanthanum doping on the electrical characteristics of PZT(53/47)

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