Improved piezoelectric properties through manganese-doping in phase coexistence region in lead strontium zirconate titanate (PSZT) thin films

Abstract

In the quaternary system PbTiO3-PbZrO3-SrTiO3-SrZrO3, compositions that lie close to the antiferroelectric tetragonal and ferroelectric rhombohedral (AFET-FER) phase boundary have potential applications in micro-actuators. However, in thin films, this phase boundary is reported to shift significantly to the zirconium-rich region. Hence, it is necessary to seek alternative approaches to stabilize the tetragonal AFE phase in such compositions. Therefore, this study explores the effect of B-site Mn3+-doping on their structure. Dielectric, ferroelectric, and piezoelectric characteristics of such thin films have been compared with those with increasing Zr/Ti ratios to understand the efficacy of this approach. Transverse piezoelectric coefficient, e31,f, and bipolar strain are found to be higher in Mn3+-doped thin films. Furthermore, large strains and e31,f in thin films have been correlated with structural modifications revealed by systematic Raman spectroscopic investigations.