1. Stopping power and energy loss straggling data of Bismuth thin film for (0.9–3.0) MeV 4He+ swift ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-11
2. Effects of crystal defects on the stopping powers for channeled ions in ion implanted single crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
3. Universal fit formula for electronic stopping of all ions in carbon and silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-12
4. Measurement of the stopping powers for channeled ions in ion implanted single crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09
5. Stopping power measurements of 1H, 4He and 14N in Si in the energy range of 0.02–1 MeV/amu;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09