1. Range parameters of heavy ions at 10 and 35 keV in silicon
2. Proc. Int. Conf. Ion Beam Surface Layer Analysis;Feuerstein,1975
3. Proc. III. Int. Conf. Ion implantation in semiconductors and other materials;Mylroie,1973
4. Proc. IV. Int. Conf. Ion implantation in semiconductors;Furukawa,1974
5. Proc. IV. Int. Conf. Ion implantation in semiconductors;Ohmura,1974