Formation of defects in the process of ion implantation into A3B5-Reference-Cited by-同舟云学术

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Formation of defects in the process of ion implantation into A3B5

Published:1982-01 Issue:1-2 Volume:66 Page:95-100
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Maksimov S. K.,Pitirimova E. A.,Pavlov P. V.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578208211478

Reference40 articles.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Be- and Mg-ion implantation-induced damage in InSb;Materials Science in Semiconductor Processing;2001-02

2. Chapter 8 Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997

3. SIMS study on redistribution of implanted impurities in InSb and InAs during post-implantation annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-05

4. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989

5. Nonstoichiometry in Ion Implantation of Gallium Arsenide. Two Competing Mechanisms;physica status solidi (a);1986-07-16

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