SIMS study on redistribution of implanted impurities in InSb and InAs during post-implantation annealing
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference9 articles.
1. Planar InSb photodiodes fabricated by Be and Mg ion implantation
2. Strained-layer superlattices: A brief review
3. Ion implantation damage and annealing in InAs, GaSb, and GaP
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InAs Diodes Fabricated Using Be Ion Implantation;IEEE Transactions on Electron Devices;2015-09
2. Comparison of implantation and diffusion behavior of Ti, Sb and N in ion-implanted single crystal and polycrystalline ZnO: A SIMS study;Applied Surface Science;2010-01
3. Distribution of impurities implanted in InSb and InAs before and after annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-05
4. Chapter 8 Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997
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