Tilted angle ion implantation-Reference-Cited by-同舟云学术

Tilted angle ion implantation

Published:1988-04 Issue:3 Volume:106 Page:165-181
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Fink D.¹,Bffirsack J. P.¹,Kranz H.²,Souza J. De³,Behar M.³,Zawislak F. C.³

Affiliation:

1. a Hahn-Meitner-Institut Berlin GmbH , Glienickerstr. 100, D-1000, Berlin 39, Germany

2. b Fraunhofer-Institutfur Festkörpertechnologie , Paul-Gerhardt-Allee 42, D-8000, Milnchen 60, Germany

3. c Institute de Fisica, Universidade Federal do Rio Grande do Sul , Campus do Vale, 90.049, Porto Alegre, R.S., Brazil

Publisher

Informa UK Limited

Subject

General Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/00337578808225699

Reference24 articles.

1. Anderson , H. H. and Ziegler , J. F. 1977. “The Stopping Powers and Ranges of Ions in Mailer”. Vol. 3, New York: (Hydrogen) and 4 (Helium) (Pergamon).

2. Backscattering study on lateral spread of implanted ions

3. An investigation of the two‐dimensional shape of ion‐implanted regions

4. Lateral spread of damage formed by ion implantation

5. Lateral distribution of ion bombardment induced defects on Pt(111) at 80 K

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Depth profiles of MeV heavy ions implanted into Si and lithium triborate;NUCL INSTRUM METH B;2004

2. Projected Range, Range Straggling and Lateral Spread of 2.0 MeV Au+Ions Implanted into Si;Japanese Journal of Applied Physics;2002-02-15

3. Ion implantation of MeV Au+into potassium titanyl phosphate;Journal of Physics D: Applied Physics;2001-05-22

4. Longitudinal and lateral distributions of medium energy heavy ions in some semiconductor films;Materials Science and Engineering: B;2001-01

5. Range straggling and lateral spread of MeV Au+ions in LiB3O5and SiN1.375H0.603;Journal of Physics D: Applied Physics;2000-07-24