An investigation of the two‐dimensional shape of ion‐implanted regions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333016
Reference16 articles.
1. Ion-implanted semiconductor devices
2. MOS field effect transistors formed by gate masked ion implantation
3. Lateral spread of ion‐implanted impurities in silicon
4. Design of ion-implanted MOSFET's with very small physical dimensions
5. Ion-implanted threshold tailoring for insulated gate field-effect transistors
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1. Determination of the lateral spread of Xe ions in silicon nitride and hydrated silicon nitride films by oblique incidence Rutherford backscattering;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-01
2. Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-01
3. Carrier distribution in silicon devices by atomic force microscopy on etched surfaces;Applied Physics Letters;1994-01-17
4. Two-dimensional distributions of Xe ions implanted in Si3N4 films;Vacuum;1993-10
5. Lateral spread effects in the implantation of Ar+, Xe+, and Hg+in Si3N4films;Journal of Applied Physics;1992-11
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