Damage distribution and measure of projected range in proton bombarded GaAs-Reference-Cited by-同舟云学术

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Damage distribution and measure of projected range in proton bombarded GaAs

Published:1982-01 Issue:1-4 Volume:60 Page:147-154
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Snyman H. C.,Neethling J. H.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578208242787

Reference21 articles.

1. Hemment, P. L. F. 1975.Applications of Ion Beams to Materials, Inst. Phys. Conf. Ser. No. 28 Edited by: Carter, G., Colligon, J. S. and Grant, W. A. 44London

2. Impurity‐peak formation during proton‐enhanced diffusion of phosphorus and boron in silicon

3. Redistribution of boron in silicon after high−temperature proton irradiation

4. Cross‐sectional specimens for transmission electron microscopy

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1. Optical method for measuring proton projected range in GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-08

2. Bilinear transformed reflectance of materials with a spatially changing refractive index;Optics Letters;1994-02-15

3. Hot implantation of protons into GaAs: Transmission electron microscopy;Journal of Applied Physics;1993-10

4. Infrared reflectivity study of ion‐implanted GaAs;Journal of Applied Physics;1993-05-15

5. Infrared and Ultraviolet Analysis of Dual-Ion Implanted Gaas;MRS Proceedings;1993

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