Infrared and Ultraviolet Analysis of Dual-Ion Implanted Gaas

Abstract

AbstractSemi-insulating <100> GaAs was implanted with 170 ke V H+ and P+ ions at room temperature using a PH3 source. Fourier analysis of the bilinear transformed optical reflectance data in the infrared region of the spectrum indicated the presence of two damaged layers at different depths from the surface: (i) a deep inhomogeneous layer of low damage produced by the protons and (ii) a thin amorphized surface layer which was produced by phosphorus ions. The position and refractive index at the peak of the assumed gaussian damage profile caused by the protons, as well as the standard deviation of the profile, were estimated rapidly from the processed data. The thickness and refractive index of the surface layer were also estimated from this analysis. The presence of the amorphized surface layer was evident from the reflectance in the ultraviolet where shift and broadening of the reflectance peaks associated with the Van Hove singularities, were observed.