An effect of oxygen content on electrical properties of donor centres formed in cz-silicon at 600°C
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578908228554
Reference16 articles.
1. On the electrical activity of oxygen in silicon
2. Electrical Properties of Thermal Donors Formed in CZ-Si during Heat Treatment at 450 °C
3. Electrical and Optical Characterization of Thermal Donors in Silicon
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Shallow Donor Centers in Erbium-Implanted Silicon Subjected to High-Temperature Annealing;MRS Proceedings;1996
2. Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation Reactions;Materials Science Forum;1995-11
3. Radiation‐induced defects in Czochralski‐grown silicon doped with germanium;Applied Physics Letters;1994-09-19
4. A Study of Defects in Heat Treated Cz-Silicon by Positron Annihilation;physica status solidi (a);1990-10-16
5. On the A-Centre Formation in Heat-Treated Cz-Silicon;physica status solidi (a);1990-07-16
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