Author:
Emtsev V.V.,Poloskin D.S.,Sobolev N.A.,Shek E.I.
Abstract
AbstractConsideration has been given to production processes of shallow donor centers formed in silicon after implantation of erbium ions or co-implantation of erbium and oxygen ions followed by annealing at 700° and 900°C. Analysis of the experimental data obtained in this work made it possible to put forward some suggestions concerning the nature of these defects.
Publisher
Springer Science and Business Media LLC