Electrical and Optical Characterization of Thermal Donors in Silicon-Reference-Cited by-同舟云学术

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Electrical and Optical Characterization of Thermal Donors in Silicon

Published:1986-02-16 Issue:2 Volume:93 Page:K181-K184
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Latushko Y. A. I.,Makarenko L. F.,Markevich V. P.,Murin L. I.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. and , in: Defects in Semiconductors, Vol. II, Ed. and , New York 1983 (p. 107).

2. Oxygen‐related thermal donors in silicon: A new structural and kinetic model

3. Theory of the silicon vacancy: An Anderson negative-Usystem

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4. Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques;Journal of Applied Physics;2018-12-14

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