Author:
Andersen J. U.,Chechenin N. G.,Timoshnikov Yu. A.,Zhang Z. H.
Reference8 articles.
1. Location of impurities in compounds by asymmetry of channeling dips
2. Preferential interaction of channelled particles in diatomic crystals
3. Borovik, A. S. and Shipatov, E. T. 1979.Proc. IX All-Union Meeting on Physics of Interaction of Particles with Solids, 117Moscow: Moscow University.
4. Asymmetry of depth oscillations for 〈110〉 channeling in GaP
5. Merz, J. L., Feldman, L. C., Mingay, D. W. and Augustyniak, W. M. 1971.Ion Implantation in Semiconductors, Edited by: Ruge, I. and Graul, J. 182Berlin: Springer.
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High Energy Ion Beam Analysis Techniques;Materials Science and Technology;2006-09-15
2. Ion-beam characterization in superlattices;Handbook of Thin Films;2002
3. Theory and Monte Carlo simulations of ion channeling for determining lattice sites of substitutional atoms;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-12
4. Asymmetry in channeling spectra for the 〈110〉 angular scan in GaP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-03
5. Dopant Site Location in Dual-Implanted Gap using {111} Planar Channeling;MRS Proceedings;1989