Preferential interaction of channelled particles in diatomic crystals
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
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1. Site identification of GaN using preferential scattering effect along axis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-06
2. Preferential ion scattering from 6H-SiC: Identification of the substitutional site of the implanted Ga impurities;Journal of Applied Physics;2001-01
3. Determination of lattice displacements in Se implanted InP by RBS and PIXE channeling experiments;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-03
4. Site Identification of 6H-SiC Using RBS/Channeling Technique;Materials Science Forum;1998-02
5. Evidence of an interfacial layer formation during rare‐earth deposition onto CdTe: The case of Sm;Journal of Applied Physics;1993-07
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