Preferential ion scattering from 6H-SiC: Identification of the substitutional site of the implanted Ga impurities
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1330241
Reference9 articles.
1. Electron Spin Resonance Studies in SiC
2. Preferential interaction of channelled particles in diatomic crystals
3. Site Identification of 6H-SiC Using RBS/Channeling Technique
4. Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
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