The influence of thermal relaxation on implantation induced disorder accumulation
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578808229948
Reference18 articles.
1. Amorphisation of solids by ion implantation
2. Nucleation of damage centres during ion implantation of silicon
3. A model for the build-up of disordered material in ion bombarded Si
4. The accumulation of amorphousness as a function of irradiation fluence in a composite model of disorder production
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1. Irradiation-induced amorphization: Effects of temperature, ion mass, cascade size, and dose rate;Physical Review B;2000-12-15
2. A Model for Irradiation-Induced Amorphization;MRS Proceedings;1997
3. Defect accumulation during room temperature N+ irradiation of silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
4. The effects of flux, fluence and temperature on amorphization in ion implanted semiconductors;Journal of Applied Physics;1996-06
5. Amorphisation during elevated temperature implantation;Vacuum;1994-12
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