Ranges of the 0.3–2 MeV H+and 0.7–2 MeV H+2ions in Si and Ge-Reference-Cited by-同舟云学术

Ranges of the 0.3–2 MeV H+and 0.7–2 MeV H+2ions in Si and Ge

Published:1982-01 Issue:3-4 Volume:59 Page:199-202
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Bister M.,Hirvonen J.,Nen J. Räisä,Anttila A.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578208237503

Reference14 articles.

1. Das, S. K., Kaminsky, M. and Fenske, G. 1975.Applications of Ion Beams to Materials, Edited by: Carter, G., Colligon, J. S. and Grant, W. A. 293Surrey: Adlard and Son Ltd.

2. Correlation between blister skin thickness, the maximum in the damage‐energy distribution, and projected ranges of He+ions in metals: Nb

3. Modal ranges of 400 - 1800 keV4He+ions in si measured via blistering

4. Range-energy relation for low energy protons in Si and Ge

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