Breakdown voltages of base-collector junctions of medium- and low-voltage graded collector transistors
Author:
Affiliation:
1. a Electrical and Computer Engineering Department , Clarkson University , Potsdam, Ny, 13676, U.S.A.
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00207219108921257
Reference6 articles.
1. Current/voltage characteristics of transistors operating in current-mode second breakdown
2. Estimate of minimum collector current for inducing current mode second breakdown in reverse biased epitaxial bipolar transistors
3. HOWER , P. L. , 1975 , Power transistor performance tradeoffs .I.E.E.E. Power Electronics Special Conference Record, pp. 217 – 222 .
4. HUMPHREYS , M. J. , and NUTTALL , K. I. , 1987 , Control of avalanche injection in bipolar transistors through the use of graded collector impurity profiles .Proceedings of the Institution of Electrical Engineers, 5 , 141 – 147 .
5. Measurement of the ionization rates in diffused silicon p-n junctions
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1. Realization of High Current Gain for Van der Waals MoS2/WSe2/MoS2 Bipolar Junction Transistor;Nanomaterials;2024-04-19
2. Breakdown voltages of base-collector junctions of high-voltage power transistors with graded collectors;International Journal of Electronics;1991-01
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