Measurement of the ionization rates in diffused silicon p-n junctions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Charge multiplication in silicon p-n junctions
2. Ionization Rates of Holes and Electrons in Silicon
3. Avalanche breakdown of diffused silicon p-n junctions
4. Graphical method for the determination of junction parameters and of multiplication parameters
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