Research on the Structure Design of Silicon Avalanche Photodiode with Near-Ultraviolet High Responsivity
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Published:2023-12-19
Issue:1
Volume:11
Page:1
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ISSN:2304-6732
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Container-title:Photonics
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language:en
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Short-container-title:Photonics
Author:
Guo Guangtong1234, Chen Weishuai134, Zheng Kaifeng134, Lv Jinguang134ORCID, Qin Yuxin134, Zhao Baixuan134, Zhao Yingze134, Chen Yupeng134, Gao Dan5, Liang Jingqiu134, Wang Weibiao134
Affiliation:
1. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China 2. University of Chinese Academy of Sciences, Beijing 100049, China 3. State Key Laboratory of Applied Optics, Changchun 130033, China 4. Key Laboratory of Optical System Advanced Manufacturing Technology, Chinese Academy of Sciences, Changchun 130033, China 5. Tonghua Normal University, Tonghua 134000, China
Abstract
To improve the low responsivity of the silicon avalanche photodiode in the near-ultraviolet wavelength range, we designed a near-ultraviolet highly responsive Si-APD basic structure with a multiplication layer neighboring the photosensitive surface through the analysis of the optical absorption characteristics, junction breakdown characteristics, and avalanche multiplication characteristics. The dark current and electric field distribution of the device were investigated. Meanwhile, the structural parameters of the surface non-depleted layer, multiplication layer, and absorption layer were optimized. It was found that the breakdown voltage of the device is 21.07 V. At an applied bias voltage of 20.02 V, the device exhibits a responsivity of 6.79–14.51 A/W in the wavelength range of 300–400 nm. These results provide valuable insights for the design of silicon avalanche photodiode with high responsivity in the near-ultraviolet range.
Funder
National Key Research and Development Program Jilin Province Science and Technology Development Program Project
Subject
Radiology, Nuclear Medicine and imaging,Instrumentation,Atomic and Molecular Physics, and Optics
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