Channeling effects in ion implantation in silicon
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
http://www.tandfonline.com/doi/pdf/10.1080/10420159408219799
Reference35 articles.
1. A Monte Carlo computer program for the transport of energetic ions in amorphous targets
2. Channeling implants of boron in silicon
3. Channeling implants of B ions into silicon surfaces
4. Axial channeling of boron ions into silicon
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