Channeling implants of B ions into silicon surfaces-Reference-Cited by-同舟云学术

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Channeling implants of B ions into silicon surfaces

Published:1991-07 Issue:3 Volume:116 Page:211-217
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Raineri V.,Galvagno G.,Rimini E.,Biersack J. P.,Nakagawa S. T.,Ferla A. La,Carnera A.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420159108213109

Reference13 articles.

1. Channeled implantation with a parallel scanned ion beam

2. Channeling of medium-mass ions through silicon

3. Channeling effect for low energy ion implantation in Si

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