An experimental and computer simulation study of the process of buried SiO2layer formation after oxygen ion implantation into silicon
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
http://www.tandfonline.com/doi/pdf/10.1080/10420159008220564
Reference33 articles.
1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
2. Silicon on Insulator Formed By O+ OR N+ Ion Implantation
3. Wilson, I. H. 1987.Ion Beam Modification of Insulators, Edited by: Mazzoldi, P. and Arnold, G. 245Elsevier Science Publishers B. V.
4. New trends in SIMOX
5. Buried layers of silicon oxy-nitride fabricated using ion beam synthesis
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion-beam mixing with chemical guidance part III: phase formation as a kinetic rather than thermodynamic phenomenon;Thin Solid Films;1994-04
2. RBS, RHEED and THEED studies of SIMOX and SIMNI structures formed by ion beam synthesis;Vacuum;1993-11
3. Dynamic Monte-Carlo simulation of compositional change and atomic redistribution in multicomponent targets under ion bombardment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-06
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