Parameter extraction and modelling of the MOS transistor by an equivalent resistance-Reference-Cited by-同舟云学术

Parameter extraction and modelling of the MOS transistor by an equivalent resistance

Published:2021-01-02 Issue:1 Volume:27 Page:50-86
ISSN:1387-3954
Container-title:Mathematical and Computer Modelling of Dynamical Systems
language:en
Short-container-title:Mathematical and Computer Modelling of Dynamical Systems

Author:

Sharroush Sherif M.¹,Abdalla Yasser S.²

Affiliation:

1. Department of Electrical Engineering, Faculty of Engineering, Port Said University, Port Said, Egypt

2. Department of Computer Engineering and Networks, College of Computer and Information Sciences, Jouf University and Faculty of Industrial Education, Suez University, Suez, Egypt

Publisher

Informa UK Limited

Subject

Applied Mathematics,Computer Science Applications,Modeling and Simulation,Software,Control and Systems Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13873954.2020.1857790

Reference51 articles.

1. Modeling and Analysis for MOS Capacitance of TSV Considering Temperature Dependence

2. Characterization and Modeling of Single Charge Trapping in MOS Transistors

3. An Unified EKV MOSFET Model to Achieve Better Performance of Practical MOS Circuits Using Verilog-A

4. FOSS EKV2.6 Verilog-A Compact MOSFET Model

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