Oxidation-Induced Changes of Work Function and Interfacial Electronic States on Si(001) Surfaces Studied by Real-Time Ultraviolet Photoelectron Spectroscopy
Author:
Publisher
The Vacuum Society of Japan
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics
Reference19 articles.
1. The surface science of semiconductor processing: gate oxides in the ever-shrinking transistor
2. 3) 総合的な解説として,Fundamental Aspects of Silicon Oxidation, edited by Y. J. Chabal (Springer, Berlin, 2001).
3. Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces
4. Surface, Interface and Valence Band of Ultra-Thin Silicon Oxides
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