Development of Localized Plasma Etching System for Failure Analyses in Semiconductor Devices: (3)Etching-Monitoring Using Quadrupole Mass Spectrometry-Reference-Cited by-同舟云学术

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Development of Localized Plasma Etching System for Failure Analyses in Semiconductor Devices: (3)Etching-Monitoring Using Quadrupole Mass Spectrometry

Published:2012 Issue:4 Volume:55 Page:171-175
ISSN:1882-4749
Container-title:Journal of the Vacuum Society of Japan
language:
Short-container-title:J. Vac. Soc. Jpn.

Author:

TAKAHASHI Satoshi,HORIE Tomoyuki,SHIRAYAMA Yuya,YOKOSUKA Shuntaro,KASHIMURA Kenta,HAYASHI Akihiro,IWASE Chikatsu,SHIMBORI Shun'ichiro,TOKUMOTO Hiroshi,NAITOH Yasuhisa,SHIMIZU Tetsuo

Publisher

The Vacuum Society of Japan

Subject

Spectroscopy,Surfaces and Interfaces,Instrumentation,General Materials Science

Reference21 articles.

1. 1) International Roadmap Committee (Eds.): Test & Test Equipment in International Technology Roadmap for Semiconductors (ITRS), 2009 ed., http://www.itrs.net/Links/2009ITRS/2009Chapters_2009Tables/2009_Test.pdf

2. Micro-machining using a focused ion beam

3. A review of ULSI failure analysis techniques for DRAMs. Part II: Defect isolation and visualization

4. Chemical Mechanical Planarization: Slurry Chemistry, Materials, and Mechanisms

5. Chemical mechanical polishing by colloidal silica-based slurry for micro-scratch reduction

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of Simple Fabrication Method of SiO₂ Diaphragm Using Inward Plasma Etching;Journal of the Vacuum Society of Japan;2017

2. Laser induced fluorescence monitoring of the etching processes with the inward plasma;Vacuum;2015-11

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