Author:
Ruprecht Michael,Benstetter Guenther,Hunt Doug
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference81 articles.
1. Benstetter G, Ruprecht M, Hunt D. A review of USLI failure analysis techniques for trench technology DRAMs, Part I: Defect localization and verification. Microelectron Reliab 2002;42:307–16
2. Application of defect simulation as a tool for more efficient failure analysis;Griep;Qual. Reliab. Eng. Int.,1994
3. Praeparationstechniken fuer die Fehleranalyse an integrierten Halbleiterschaltungen;Beck,1988
4. The science and engineering of microelectronic fabrication;Campbell,1996
5. Spinella C. Chemical and electrochemical staining for two-dimensional dopant concentration profiling on USLI silicon devices. In: Defects and Diffusion in Silicon Processing, Material Research Society Symposium Proceedings, Warrendale, PA, vol. 469, April 1997. p. 323–8
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